elektronische bauelemente SS8550 pnp silicon general purpose transistor 01-june-2005 rev. b page 1 of 2 features z power dissipation p cm : 0.3 w z collector current i cm : - 1.5 a z collector-base voltage v (br)cbo : - 40 v z operating & storage junction temperature t j , t stg : - 55c ~ + 150c electrical characteristics at ta = 25 c symbol min. typ. max. unit test conditions bv cbo -40 - - v ic = 100 a, i e = 0 bv ceo -25 - - v ic = -0.1ma, i b = 0 bv ebo -5 - - v i e = -100 a, i c = 0 i cbo - - -0.1 a v cb = -40 v, i e = 0 i ceo - - -0.1 a v ce = -20v, i b = 0 i ebo - - -0.1 a v eb = -5v, i c = 0 v ce(sat) - - 0.5 v i c = -800 ma, i b = -80ma v be(sat)1 - - 1.2 v i c = -800 ma, i b = -80ma *h fe 1 120 - 350 - v ce = -1v, i c =-100ma *h fe 2 40 - - - v ce = -1v, i c = -800ma f t 100 - - mhz v ce = -10v, i c = -50ma, f = 30mhz c ob - - 20 pf v cb = -10v, i e =0, f=1mhz classification of h fe(1) rank l h j range 120 - 200 200-350 300-400 marking y2 rohs compliant product a suffix of ?-c? specifies halogen & lead-free collector base emitter dim min max a 2.800 3.040 b 1.200 1.400 c 0.890 1.110 d 0.370 0.500 g 1.780 2.040 h 0.013 0.100 j 0.085 0.177 k 0.450 0.600 l 0.890 1.020 s 2.100 2.500 v 0.450 0.600 all dimension in mm sot-23 k j c h l a b s g v 3 1 2 d top view 1 2 3 collector 3 1 base 2 emitter
elektronische bauelemente SS8550 pnp silicon general purpose transistor 01-june-2005 rev. b page 2 of 2 characteristic curves
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